| PART |
Description |
Maker |
| STP80N20M5 STB80N20M5 |
N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh(TM) V Power MOSFET in D2PAK Package
65 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 200 V, 0.019 ohm, 61 A, TO-220, D2PAK
|
ST Microelectronics
STMICROELECTRONICS
|
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| HUF76432P3 FN4673 HUF76432S3S HUF76432S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 56A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直|6A条（丁）|63AB
Dual Differential Drivers And Receivers 16-TSSOP -40 to 85 59 A, 60 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
From old datasheet system
|
Intersil, Corp.
Intersil Corporation
|
| S5573 |
MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| SUM55P06-19L SUM55P06-19L-E3 |
55 A, 60 V, 0.019 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB TO-263, 3 PIN
55 A, 60 V, 0.019 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB ROHS COMPLIANT, TO-263, 3 PIN
|
Vishay Intertechnology, Inc.
|
| HPLU3103 HPLR3103 FN4501 HPLRB3103 |
52A/ 30V/ 0.019 Ohm/ N-Channel Logic Level/ Power MOSFETs
52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| S7878 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| STD50N03L-1 |
40 A, 30 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AB
|
STMICROELECTRONICS
|
| HPLR3103 |
52A/ 30V/ 0.019 Ohm/ N-Channel Logic Level/ Power MOSFETs
52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs
|
Fairchild Semiconductor
|
| NTD5806NT4G |
40V, 18 mOhm, N-Channel, D-Pak, MOSFET 33 A, 40 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| STD6N65M2 STB6N65M2 |
Zener-protected
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in D2PAK package
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in DPAK package
|
STMicroelectronics
ST Microelectronics
|
| STF20N65M5 STFI20N65M5 |
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh(TM) V Power MOSFET in TO-220FP package
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh(TM) V Power MOSFET in I2PAKFP package
|
ST Microelectronics
|
|
